electronics360.globalspec2d
Vishay Intertechnology 650 V and 1,200 V SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Compoundsemiconductor.net2d
Realising tuneable InGaN laser diodes
Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...
Electronic Products3d
Vishay expands SiC Schottky diode portfolio
The new SiC Schottky diodes deliver high speed and efficiency in high frequency applications. They offer the best trade-off ...
Electropages8h
Automotive TVS diodes offer industry-leading low clamping voltage
Littelfuse, Inc. has launched the TPSMB-L Series Automotive TVS Diodes, designed explicitly for BMS in 800V EVs. These innovative diodes feature an industry-leading ultra-low clamping voltage (Vcl), ...
Compoundsemiconductor.net1d
Navitas’ GaN and SiC chips power AI notebooks
Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...
New Electronics2d
Littelfuse introduces TPSMB-L Series Automotive TVS Diodes
Littelfuse has launched the TPSMB-L Series Automotive TVS Diode, designed explicitly for BMS in 800V electric vehicles.
Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks
Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...