Gallium Arsenide (GaAs) photoconductive semiconductor ... enhancing the device's performance[4][5]. Photoconductive Semiconductor Switch (PCSS): A type of electronic switch that uses light to ...

Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...

A group of Korean researchers have recently succeeded in developing new p-type semiconductor materials and thin-film ...

A solar cell is made of two types of semiconductors, called p-type and n-type silicon. The p-type silicon is produced by adding atoms—such as boron or gallium—that have one less electron in their ...

An alloy of gallium ... gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost. See gallium nitride and III-V semiconductor.

The compound semiconductor market is segmented based on material type, including GaN, gallium arsenide (GaAs), silicon carbide (SiC), indium phosphide (InP), silicon germanium (SiGe), and gallium ...

Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials ... The cell was monolithically grown on gallium arsenide by molecular beam epitaxy (MBE).

The reflector was optically optimized through a combination of ceramic and silver and the cell's absorber was based on nitrogen-doped gallium arsenide and p-type aluminum gallium arsenide.